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Mine Nakagawa, Robert Dunne, Hidemi Koike, Mitsugu Sato, Juan J. Pérez‐Camacho, Barry J. Kennedy, Low voltage FE‐STEM for characterization of state‐of‐the‐art silicon SRAM, Journal of Electron Microscopy, Volume 51, Issue 1, 15 March 2002, Pages 53–57, https://doi.org/10.1093/jmicro/51.1.53
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Abstract
Low voltage (30 kV) field emission scanning transmission electron microscopy (FE‐STEM) has been employed in the characterization of state‐of‐the‐art semiconductor static random access memory (SRAM) using specimens prepared at several different thicknesses (70–180 nm). A focused ion beam (FIB) system, a FIB‐SEM compatible specimen holder and an in‐lens FE‐SEM have been employed for alternating between FIB milling and SEM/STEM imaging. As a result, ion implanted atom damage during manufacturing, grains in aluminium interconnects, poly silicon gates, thin metal barriers and a thin gate oxide layer were observed by low voltage FE‐STEM.