Table 1.

The relationships between effective viscosity and electrical resistivity under different conditions of charge-neutrality (⁠|$\frac{{{{\bf{\eta }}_{{\bf{eff}}}}}}{{{\eta _0}}} = {( {\frac{\rho }{{{\rho _0}}}} )^{\frac{m}{n}}}$|⁠). The |${\sigma _{\mathrm{ wet}0}}$| and |${\sigma _{\mathrm{ dry}0}}$| represent the reference electrical resistivities for the ‘wet’ and ‘dry’ conditions, respectively. The |${\eta _{\mathrm{ wet}0}}$| and |${\eta _{\mathrm{ dry}0}}$| represent the reference viscosities for the wet and dry conditions, respectively.

Defect control dislocation creepCarriersCharge-neutrality conditionmLaboratory-based relation
|$( {3\mathrm{ H}} )_\mathrm{Si}^{\prime}$||${{\rm{H}}^ \cdot }$||$[ {\mathrm{ Fe}_\mathrm{m}^ \cdot } ] = [ {\mathrm{ H}_\mathrm{m}^{\prime}} ]$|5/3|${\eta _{\mathrm{ wet}0}}$|/|${\sigma _{\mathrm{ wet}0}}$|
|$V_\mathrm{Si}^{^{\prime\prime\prime \prime}}$||${\rm{Fe}}_{\rm{M}}^ \cdot $||$[ {\mathrm{ Fe}_\mathrm{m}^ \cdot } ] = 2[ {\mathit{ V}_\mathrm{m}^{^{\prime\prime}}} ]$|2|${\eta _{\mathrm{ dry}0}}$|/|${\sigma _{\mathrm{ dry}0}}$|
Defect control dislocation creepCarriersCharge-neutrality conditionmLaboratory-based relation
|$( {3\mathrm{ H}} )_\mathrm{Si}^{\prime}$||${{\rm{H}}^ \cdot }$||$[ {\mathrm{ Fe}_\mathrm{m}^ \cdot } ] = [ {\mathrm{ H}_\mathrm{m}^{\prime}} ]$|5/3|${\eta _{\mathrm{ wet}0}}$|/|${\sigma _{\mathrm{ wet}0}}$|
|$V_\mathrm{Si}^{^{\prime\prime\prime \prime}}$||${\rm{Fe}}_{\rm{M}}^ \cdot $||$[ {\mathrm{ Fe}_\mathrm{m}^ \cdot } ] = 2[ {\mathit{ V}_\mathrm{m}^{^{\prime\prime}}} ]$|2|${\eta _{\mathrm{ dry}0}}$|/|${\sigma _{\mathrm{ dry}0}}$|
Table 1.

The relationships between effective viscosity and electrical resistivity under different conditions of charge-neutrality (⁠|$\frac{{{{\bf{\eta }}_{{\bf{eff}}}}}}{{{\eta _0}}} = {( {\frac{\rho }{{{\rho _0}}}} )^{\frac{m}{n}}}$|⁠). The |${\sigma _{\mathrm{ wet}0}}$| and |${\sigma _{\mathrm{ dry}0}}$| represent the reference electrical resistivities for the ‘wet’ and ‘dry’ conditions, respectively. The |${\eta _{\mathrm{ wet}0}}$| and |${\eta _{\mathrm{ dry}0}}$| represent the reference viscosities for the wet and dry conditions, respectively.

Defect control dislocation creepCarriersCharge-neutrality conditionmLaboratory-based relation
|$( {3\mathrm{ H}} )_\mathrm{Si}^{\prime}$||${{\rm{H}}^ \cdot }$||$[ {\mathrm{ Fe}_\mathrm{m}^ \cdot } ] = [ {\mathrm{ H}_\mathrm{m}^{\prime}} ]$|5/3|${\eta _{\mathrm{ wet}0}}$|/|${\sigma _{\mathrm{ wet}0}}$|
|$V_\mathrm{Si}^{^{\prime\prime\prime \prime}}$||${\rm{Fe}}_{\rm{M}}^ \cdot $||$[ {\mathrm{ Fe}_\mathrm{m}^ \cdot } ] = 2[ {\mathit{ V}_\mathrm{m}^{^{\prime\prime}}} ]$|2|${\eta _{\mathrm{ dry}0}}$|/|${\sigma _{\mathrm{ dry}0}}$|
Defect control dislocation creepCarriersCharge-neutrality conditionmLaboratory-based relation
|$( {3\mathrm{ H}} )_\mathrm{Si}^{\prime}$||${{\rm{H}}^ \cdot }$||$[ {\mathrm{ Fe}_\mathrm{m}^ \cdot } ] = [ {\mathrm{ H}_\mathrm{m}^{\prime}} ]$|5/3|${\eta _{\mathrm{ wet}0}}$|/|${\sigma _{\mathrm{ wet}0}}$|
|$V_\mathrm{Si}^{^{\prime\prime\prime \prime}}$||${\rm{Fe}}_{\rm{M}}^ \cdot $||$[ {\mathrm{ Fe}_\mathrm{m}^ \cdot } ] = 2[ {\mathit{ V}_\mathrm{m}^{^{\prime\prime}}} ]$|2|${\eta _{\mathrm{ dry}0}}$|/|${\sigma _{\mathrm{ dry}0}}$|
Close
This Feature Is Available To Subscribers Only

Sign In or Create an Account

Close

This PDF is available to Subscribers Only

View Article Abstract & Purchase Options

For full access to this pdf, sign in to an existing account, or purchase an annual subscription.

Close