The relationships between effective viscosity and electrical resistivity under different conditions of charge-neutrality (|$\frac{{{{\bf{\eta }}_{{\bf{eff}}}}}}{{{\eta _0}}} = {( {\frac{\rho }{{{\rho _0}}}} )^{\frac{m}{n}}}$|). The |${\sigma _{\mathrm{ wet}0}}$| and |${\sigma _{\mathrm{ dry}0}}$| represent the reference electrical resistivities for the ‘wet’ and ‘dry’ conditions, respectively. The |${\eta _{\mathrm{ wet}0}}$| and |${\eta _{\mathrm{ dry}0}}$| represent the reference viscosities for the wet and dry conditions, respectively.
Defect control dislocation creep . | Carriers . | Charge-neutrality condition . | m . | Laboratory-based relation . |
---|---|---|---|---|
|$( {3\mathrm{ H}} )_\mathrm{Si}^{\prime}$| | |${{\rm{H}}^ \cdot }$| | |$[ {\mathrm{ Fe}_\mathrm{m}^ \cdot } ] = [ {\mathrm{ H}_\mathrm{m}^{\prime}} ]$| | 5/3 | |${\eta _{\mathrm{ wet}0}}$|/|${\sigma _{\mathrm{ wet}0}}$| |
|$V_\mathrm{Si}^{^{\prime\prime\prime \prime}}$| | |${\rm{Fe}}_{\rm{M}}^ \cdot $| | |$[ {\mathrm{ Fe}_\mathrm{m}^ \cdot } ] = 2[ {\mathit{ V}_\mathrm{m}^{^{\prime\prime}}} ]$| | 2 | |${\eta _{\mathrm{ dry}0}}$|/|${\sigma _{\mathrm{ dry}0}}$| |
Defect control dislocation creep . | Carriers . | Charge-neutrality condition . | m . | Laboratory-based relation . |
---|---|---|---|---|
|$( {3\mathrm{ H}} )_\mathrm{Si}^{\prime}$| | |${{\rm{H}}^ \cdot }$| | |$[ {\mathrm{ Fe}_\mathrm{m}^ \cdot } ] = [ {\mathrm{ H}_\mathrm{m}^{\prime}} ]$| | 5/3 | |${\eta _{\mathrm{ wet}0}}$|/|${\sigma _{\mathrm{ wet}0}}$| |
|$V_\mathrm{Si}^{^{\prime\prime\prime \prime}}$| | |${\rm{Fe}}_{\rm{M}}^ \cdot $| | |$[ {\mathrm{ Fe}_\mathrm{m}^ \cdot } ] = 2[ {\mathit{ V}_\mathrm{m}^{^{\prime\prime}}} ]$| | 2 | |${\eta _{\mathrm{ dry}0}}$|/|${\sigma _{\mathrm{ dry}0}}$| |
The relationships between effective viscosity and electrical resistivity under different conditions of charge-neutrality (|$\frac{{{{\bf{\eta }}_{{\bf{eff}}}}}}{{{\eta _0}}} = {( {\frac{\rho }{{{\rho _0}}}} )^{\frac{m}{n}}}$|). The |${\sigma _{\mathrm{ wet}0}}$| and |${\sigma _{\mathrm{ dry}0}}$| represent the reference electrical resistivities for the ‘wet’ and ‘dry’ conditions, respectively. The |${\eta _{\mathrm{ wet}0}}$| and |${\eta _{\mathrm{ dry}0}}$| represent the reference viscosities for the wet and dry conditions, respectively.
Defect control dislocation creep . | Carriers . | Charge-neutrality condition . | m . | Laboratory-based relation . |
---|---|---|---|---|
|$( {3\mathrm{ H}} )_\mathrm{Si}^{\prime}$| | |${{\rm{H}}^ \cdot }$| | |$[ {\mathrm{ Fe}_\mathrm{m}^ \cdot } ] = [ {\mathrm{ H}_\mathrm{m}^{\prime}} ]$| | 5/3 | |${\eta _{\mathrm{ wet}0}}$|/|${\sigma _{\mathrm{ wet}0}}$| |
|$V_\mathrm{Si}^{^{\prime\prime\prime \prime}}$| | |${\rm{Fe}}_{\rm{M}}^ \cdot $| | |$[ {\mathrm{ Fe}_\mathrm{m}^ \cdot } ] = 2[ {\mathit{ V}_\mathrm{m}^{^{\prime\prime}}} ]$| | 2 | |${\eta _{\mathrm{ dry}0}}$|/|${\sigma _{\mathrm{ dry}0}}$| |
Defect control dislocation creep . | Carriers . | Charge-neutrality condition . | m . | Laboratory-based relation . |
---|---|---|---|---|
|$( {3\mathrm{ H}} )_\mathrm{Si}^{\prime}$| | |${{\rm{H}}^ \cdot }$| | |$[ {\mathrm{ Fe}_\mathrm{m}^ \cdot } ] = [ {\mathrm{ H}_\mathrm{m}^{\prime}} ]$| | 5/3 | |${\eta _{\mathrm{ wet}0}}$|/|${\sigma _{\mathrm{ wet}0}}$| |
|$V_\mathrm{Si}^{^{\prime\prime\prime \prime}}$| | |${\rm{Fe}}_{\rm{M}}^ \cdot $| | |$[ {\mathrm{ Fe}_\mathrm{m}^ \cdot } ] = 2[ {\mathit{ V}_\mathrm{m}^{^{\prime\prime}}} ]$| | 2 | |${\eta _{\mathrm{ dry}0}}$|/|${\sigma _{\mathrm{ dry}0}}$| |
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