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Yumi Watanabe, Satoshi Takeuchi, Mitsuo Ashisada, Yasunari Ikezawa, Tsutomu Takamura, Potential Distribution and Ionic Concentration at the Bean Root Surface of the Growing Tip and Lateral Root Emerging Points, Plant and Cell Physiology, Volume 36, Issue 4, June 1995, Pages 691–698, https://doi.org/10.1093/oxfordjournals.pcp.a078810
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Abstract
The electrical potential distribution has been measured precisely around the root surface of the bean sprout Vigna mungo (L) Hepper. A large negative potential well was found at the growth portion of the root tip. Also, in the matured region of the root, we found a negative potential well at an unspecified position in spite of the fact that nothing was detected on the smooth surface. A lateral root emerge was found to have initiated after 15–20 hours just at the position corresponding to the potential well. With the expectation that these potentials can be elucidated based on the transport of ions which are released or absorbed by the root as a result of cell activity, we precisely measured the concentrations of major ion species (K+, H+, and Cl−) around the root. The theoretical potential distribution curves obtained by putting all the concentration data into the Henderson's Equation for a liquid junction (diffusion) potential coincided well with the experimental curves.